邓林峰

 

一、基本情况

邓林峰,男

湖南大学电气与信息工程学院助理教授

手机号:13507485686

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二、学习与工作经历

学习经历

2008/01 – 2011/12,香港大学,工程学院电机电子工程系,博士;

2005/09 – 2007/06,华中科技大学,光学与电子信息学院微电子学系,硕士;

1999/09 – 2003/07,合肥工业大学,电子科学与应用物理学院物理系,学士。

工作经历

   2014/10 至今,湖南大学,电气与信息工程学院,助理教授

三、主要研究方向

电子设计自动化(EDA)技术,半导体器件与集成电路,电力电子技术

四、研究项目

1、国家自然科学基金项目,61404048基于低频噪声的有机场效应晶体管可靠性研究主持;

2、湖南省自然科学基金项目,2015JJ3043基于1/f噪声的有机场效应晶体管器件可靠性研究、主持。

3、高等学校博士学科点专项基金项目,20120161120012有机薄膜晶体管1/f噪声机理与特性研究、主持;

4、湖南大学青年教师成长计划项目,531107040551有机薄膜晶体管1/f噪声的物理及电路模型研究、主持。

5、国家自然科学基金项目,51577054碳化硅双极结型晶体管的研究、参加;

6、湖南省自然科学基金项目,2013WK3033 便携式高精度电导测试仪的研究、参加;

7、国家自然科学基金项目,61671203、波束赋形和自适应波束调节的MIMO测试关键技术研究、参加。

五、发表论文

1L. F. Deng, P. T. Lai, W. B. Chen, J. P. Xu, Y. R. Liu, H. W. Choi, and C.M. Che, Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric, IEEE Electron Device Letters, 2011, 32, 93-95

2L. F. Deng, Y. R. Liu, H. W. Choi, J. P. Xu, C. M. Che, P. T. Lai, Effects of Annealing Temperature and Gas on Pentacene OTFTs with HfLaO as Gate Dielectric, IEEE Transactions on Device and Materials Reliability, 2012,12, 10-15.

3L. F. Deng, Y. R. Liu, H. W. Choi, C. M. Che, P. T. Lai, Improved Performance of Pentacene OTFTs with HfLaO Gate Dielectric by Using Fluorination and Nitridation, IEEE Transactions on Device and Materials Reliability, 2012,12, 520-525

4L. F. Deng, P. T. Lai, J. P. Xu, H. W. Choi, W. B. Chen, and C. M. Che, Improved Performance of Pentacene OTFT with HfLaO Gate Dielectric by Annealing in NH3, ECS Transactions, 2010, 33, 265-269

5邓林峰, 余岳辉, 彭亚斌, 周郁明, 梁琳, 王璐,反向开关复合管的物理模型与数值方法实现, 半导体学报, 2007,28(6):931-938

6Liu Y. R., Deng, L. F., Yao, R. H., Lai, P. T. , Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric, IEEE Transactions on Device and Materials Reliability, 2010,10, 233-238

7Cheng K. H., Tang W. M., Deng L. F., Leung C. H., Lai P. T., Che C. M., Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric, Journal of Applied Physics, 2008,104, 116107-1--116107-4

8Y. R. Liu, P. T. Lai, R. H. Yao, L. F. Deng, Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitance-voltage analysis, IEEE Transactions on Device and Materials Reliability, 2011,11, 60-64

(9) L. F. Deng, P. T. Lai, Q. B. Tao, H. W. Choi, W. B. Chen, C. M. Che, J. P. Xu, Y. R. Liu, Improved Performance of Low-voltage Pentacene OTFTs by Incorporating La to Hafnium Oxide Gate Dielectric, 2010 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, P.R. China, 2010.11.11-11.12

(10) Deng L. F., Choi H. W., Lai P. T. , Liu Y. R., Xu J. P., Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Xian, P.R.China, 2009.12.14-12.15.

(11) Deng L. F., Tang W. M., Leung C. H., Lai P. T. , Xu J. P., Che C. M., Pentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, P.R. China,,2008.11.20-11-21

(12)邓林峰, 余岳辉, 梁琳, 王璐, 重频RSD的关断模型研究, 中国电工技术学会电力电子学会第十届学术年会,西安,中国, 2006.9.23-9.25.