王俊

一、基本情况
王俊,男,汉族,1979年7月出生于湖北省黄冈市,湖南大学电气与信息工程学院教授、博士生导师,2013年入选国家人才计划,湖南省百人计划获得者,IEEE高级会员,IEEE Journal of Emerging and Selected Topics in Power Electronics和IET Power Electronics期刊编委.Email:junwang@hnu.edu.cn该Email地址已收到反垃圾邮件插件保护。要显示它您需要在浏览器中启用JavaScript。 , jwangncsuchn@gmail.com该Email地址已收到反垃圾邮件插件保护。要显示它您需要在浏览器中启用JavaScript。

二、学习工作经历
1996.9—2000.7  中国 华中科技大学 电子科学与技术系 学士
2000.9—2003.7  中国 中国科学院半导体研究所 固体电与微电子学专业 硕士
2003.8—2005.5  美国 南卡罗莱纳大学 电子工程专业 硕士
2005.6—2009.12 美国 北卡罗莱纳州立大学 电子工程专业 博士
2007.5—2007.8  美国 锐(Cree)公司,实习
2009.5—2009.8,美国 橡树岭国家实验室,实习
2010.2—2013.12 美国 德州仪器公司 器件设计工程师
2014.1—至今    中国 湖南大学   教授

三、主要研究方向
近十年主要从事功率半导体器件及其在电力电子系统中应用的研究,研制了世界首个碳化硅ETO晶闸管,在国际高水平刊物和会议上已发表论文七十余篇,获2项美国发明专利和1项日本发明专利,5项中国专利。主要研究方向包括:1)硅基功率MOSFET和IGBT的研究,碳化硅(SiC)功率器件的研究,3)氮化镓(GaN)器件的研究,4)电力电子器件的智能驱动,5)高功率密度变换器的研究。近年来,主持参与了国家自然科学基金面上项目、国家“863”项目和企业横向合作项目等。欢迎具有物理、材料、电气或电子等学科背景的的学生报考硕士和博士研究生。

四、代表性论文、著作、专利
1. L. Liao, J. Wang, S. Tang, Z. Shuai, X. Yin, J. Shen, A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor, IEEE Transactions on Power Electronics, 2016.
2. Shiwei Liang, Jun Wang, Linfeng Deng, Yize Shi, Xin Yin, and Z. John Shen, "An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT over Wide Current and Temperature Range," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1727-1735, Sept. 2019.

3. J. Wang, S. Xu, J. Korec, “Power MOSFET with Integrated Gate Resistor and Diode-Connected MOSFET”, United States Patent 8614480.
4. Jun Wang, Shiwei Liang, Linfeng Deng, Xin Yin, and Z. John Shen, "An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect," IEEE Transactions on Power Electronics, vol. 34, no. 7, pp. 6794-6802, 2019.

5. J. Wang, X. Jiang, Z. Li and J. Shen, "Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch", IEEE Transactions on Power Electronics, 2019, vol 34, no. 3, pp. 2771-2780.

6.J. Wang, Z. Li, X. Jiang, C. Zeng and J. Shen, "Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction", IEEE Transactions on Power Electronics, February 2019, vol 34, no. 2, pp. 1744-1754.

7. J. Wang, A. Q. Huang, W. Sung, Y. Liu, B. J. Baliga, “Smart grid technologies,” IEEE Industrial Electronics Magazine, vol. 2, no. 2, Jun. 2009, pp. 16-23.
8. J. Wang, A. Q. Huang, “Design and Characterization of High Voltage Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” IEEE Transaction on Power Electronics, vol. 24, no. 5, May 2009, pp. 1189-1197.
9. J. Wang, T. Zhao, A. Q. Huang, R. Callanan, A. Agarwal, “Characterization, Modeling and Application of 10 kV SiC MOSFET,” IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798-1806, Aug. 2008.
10. J. Wang, A. Q. Huang, S. Atcitty, I. Gyuk, “Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” International Journal of Power Management Electronics, Volume 2008, Article ID 891027, 5 pages, 2008.
11. J. Wang, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, A. Agarwal, “10 kV SiC MOSFET Based Boost Converter,” IEEE Transaction on Industry Applications, vol. 45, no. 6, pp. 2056-2063, September, 2009.
12. J. Wang, D. Zhao, Y. Sun, Wang, S. Zhang, H. Yang, S. Zhou and M. Wu, “Thermal annealing behavior of Pt on n-GaN Schottky contacts,” JOURNAL OF PHYSICS D: APPLIED PHYSICS, Vol. 36, 2003, pp. 1018-1022.
13. J. Wang, D. Zhao, Z. Liu, G. Feng, J. Zhu, X. Shen, B. Zhang and H. Yang, “Metal-semiconductor-metal ultraviolet photodetector based on GaN,” Science in China (Series G), Vol. 46, No. 2, 2003, pp. 198-203.
14. Q. Zhang, J. Wang, A. Agarwal, J. Palmour, A. Q. Huang, et al., “Design and Characterization of High Voltage 4H-SiC p-IGBTs,” IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1912-1919.

五、主要讲授课程
电力电子器件及应用技术(研究生), 现代电力电子技术基础(本科)