王俊

一、基本情况

  王俊,男,汉族,19797月出生于湖北省黄冈市

  湖南大学电气与信息工程学院教授、博士生导师

  国家特聘青年专家、湖南省“高层次人才聚集工程”创新人才、湖南大学岳麓学者、东华软件青年学者

  中国功率半导体技术创新与产业联盟专家委员会委员、中国电源学会器件专委会委员、中国电机工程学会电力电子器件专委会委员、中国物理学会应用物理前沿推介委员会

  IEEE高级会员, IEEE Journal of Emerging and Selected Topics in Power ElectronicsIET Power Electronics编委.

  Emailjunwang@hnu.edu.cn  junwang-hnu@qq.com

二、学习和工作经历

1996.9—2000.7  中国 华中科技大学 电子科学与技术系 学士

2000.9—2003.7  中国 中国科学院半导体研究所 固体电与微电子学专业 硕士

2003.8—2005.5  美国 南卡罗莱纳大学 电子工程专业 硕士

2005.6—2009.12 美国 北卡罗莱纳州立大学 电子工程专业 博士

2007.5—2007.8  美国 科锐(Cree)公司,实习

2009.5—2009.8,美国 橡树岭国家实验室,实习

2010.2—2013.12 美国 德州仪器公司 高级工程师

2014.1—至今    中国 湖南大学   教授

 

三、主要研究方向和科研项目情况

在功率半导体器件和电力电子技术领域有大量的研发和产业化经验,所研发的功率半导体器件包括基于SiSiC材料的二极管、MOSFETIGBTGTOBJT及其功率模块,涉及器件的仿真设计、工艺开发、流片研制、测试分析、可靠性分析和评估;所研究的电力电子变换器包括高能效高功率密度DC/DC变换器、PFC、逆变器、DABMMC等。

美国北卡罗来纳州立大学博士攻读期间,发明了世界首个SiC ETO晶闸管;美国德州仪器公司工作期间,所研发的高性能功率MOSFET 产品(NexFET)被应用到苹果公司的iphone5ipad2、戴尔和惠普服务器等产品中;发表第一作者/通讯作者国际期刊论文40余篇,拥有3项美国发明专利、1项日本发明专利和17项中国发明专利。

主持了1个国家自科基金区域创新联合基金重点项目、2个国家自科基金面上项目、1个湖南省重点研发计划项目、1个重点研发计划项目子课题、工信部“强基工程”项目子课题、湖南省重大专项项目课题和15项企业横向合作项目。

 

四、代表性论文和专利情况

1.            D. WangJohn Shen, X. Yin, Xifei Liu, Chao Zhang, Jun Wang, Jose Rodriguez, Margarita Norambuena, "Model Predictive Control Using Artificial Neural Network for Power Converters," in IEEE Transactions on Industrial Electronics, vol. 69, no. 4, pp. 3689-3699, May 2021.

2.            Sai Tang, Jun Wang, Daming Wang, Chao Zhang, Xin Yin, Zhikang Shuai, John Shen, “Vector Analysis Based Multiobjective Modulated Model Predictive Control for Four Switching States Multilevel Converters”, IEEE Transactions on Industrial Electronics, Early Access, 2021.

3.            Chao Zhang, Jun Wang, Kun Qu and et al., "WBG and Si Hybrid Half-Bridge Power Processing Towards Optimal Efficiency, Power Quality, and Cost Tradeoff," in IEEE Transactions on Power Electronics. vol. 37, no. 6, pp. 6844-6856, June 2021.

4.            C. Zhang, K. Qu, B. Hu, J. Wang, X. Yin and Z. J. Shen, "A High-Frequency Dynamically Coordinated Hybrid Si/SiC Interleaved CCM Totem-Pole Bridgeless PFC Converter," in IEEE Journal of Emerging and Selected Topics in Power Electronics. doi: 10.1109/JESTPE.2021.3130083

5.            H.Yu, Jun Wang, et.al."Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress", in IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021.

6.            Zongjian Li, X. Dai, X. Jiang, F. Qi, Y. Liu, P. Ke, Y. Wang, J. Wang, “A novel gate driver for Si/SiC hybrid switch for multi-objective optimization”, IET Power Electronics, 2021, 14: 422-431.

7.            H. Yu, S. Liang, H. Liu, J. Wang and J. Shen, “Numerical Study of SiC MOSFET with Integrated N/N Type Poly-Si/SiC Heterojunction Freewheeling Diode,” IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4571-4576, July 2021.

8.            H. Chen, D. Wang, S. Tang, X. Yin, J. Wang and Z. J. Shen, "Continuous Control Set Model Predictive Control for Three-Level Flying Capacitor Boost Converter with Constant Switching Frequency," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 5, pp. 5996-6007, Oct. 2021.

9.            S. Tang, J. Wang, R. Zheng, D. Wang, C. Zhang, X. Yin, Z. Shuai, Z. John Shen, "Detection and Identification of Power Switch Failures Using Discrete Fourier Transform for DC-DC Flying Capacitor Buck Converters," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 4, pp. 4062-4071, August 2021.

10.         Z. Zeng, Z. Li, J. Wang, X. Jiang, F. Li, H. Yu, J. Chen, Z. John Shen, "Influence of Gate Loop Inductance on TSEP-based Junction Temperature Monitoring for IGBT," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 4, pp. 4072-4081, August 2021.

11.         X. Jiang, J. Wang, J. Chen, H. Yu, Z. Li and Z. J. Shen, "Investigation on Degradation of SiC MOSFET under Accelerated Stress in PFC Converter," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 4, pp. 4299-4310, August 2021.

12.         S. Liang, H. Yu, H. Liu, Y. Wang, and J. Wang, "A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode," Semiconductor Science and Technology, vol. 36, 095017, 2021.

13.         H. Liu, J. Wang, S. Liang, H. Yu and W. Deng, "Physical modeling and design optimization of 4H-SiC insulated gate bipolar transistors for dv/dt reduction," Semiconductor Science and Technology, Volume 36, 025009, 2021.

14.         S. Liang, J. Wang, F. Fang, H. Liu and W. Deng, "Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications," Semiconductor Science and Technology, Volume 35, 045028, 2020.

15.         C. Zhang, J. Wang, S. Tang, D. Wang, H. Yu, Z. Li, X. Yin, Z. John Shen, “Coordinated Two-Stage Operation and Control for Minimizing Energy Storage Capacitors in Cascaded Boost-Buck PFC Converters”, in IEEE Access, vol. 8, pp. 191286-191297, 2020.

16.         X. Jiang, J. Wang, H. Yu, J. Chen, Z. Zeng, X. Yang, Z. John Shen, "Online junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction," in IEEE Transactions on Power Electronics, vol. 36, no. 4, pp. 3757-3768, April 2021.

17.         Z. Peng, J. Wang, Z. Liu, Z. Li, Y. Dai, G. Zeng, Z. John Shen, "A Variable-Frequency Current-Dependent Switching Strategy to Improve Tradeoff between Efficiency and SiC MOSFET Overcurrent Stress in Si/SiC Hybrid Switch Based Inverters," in IEEE Transactions on Power Electronics, vol. 36, no. 4, pp. 4877-4886, April 2021.

18.         Z. Peng, J. Wang, Z. Liu, Z. Li, D. Wang, Y. Dai, G. Zeng, Z. John Shen, "Adaptive Gate Delay-time Control of Si/SiC Hybrid Switch for Efficiency Improvement in Inverters," in IEEE Transactions on Power Electronics, vol. 36, no. 3, pp. 3437-3449, March 2021.

19.         Z. Li, J. Wang, B. Ji and Z. J. Shen, "Power Loss Model and Device Sizing Optimization of Si/SiC Hybrid Switches," in IEEE Transactions on Power Electronics, vol. 35, no. 8, pp. 8512-8523, Aug. 2020.

20.         C. Zhang, J. Wang, S. Tang, D. Wang, X. Yin, Z. Shuai, Z. John Shen, "A New PFC Design With Interleaved MHz-Frequency GaN Auxiliary Active Filter Phase and Low-Frequency Base Power Si Phase," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 557-566, March, 2020.

21.         S. Liang, J. Wang, L. Deng, F. Fang and Z. J. Shen, "Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 24-30, March 2020.

22.         Z. Zeng, J. Wang, F. Li, X. Yin and Z. J. Shen, "Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1615-1626, Sept. 2019.

23.         Z. Peng, J. Wang, Z. Liu, Y. Dai, G. Zeng and Z. J. Shen, "Fault-Tolerant Inverter Operation Based on Si/SiC Hybrid Switches," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 545-556, March 2020.

24.         Z. Li, J. Wang, Z. He, J. Yu, Y. Dai and Z. J. Shen, "Performance Comparison of Two Hybrid Si/SiC Device Concepts," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 42-53, March 2020.

25.         X. Jiang, J. Wang, J. Chen, Z. Li, D. Zhai, X. Yang, B. Ji, Z. John Shen, "Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 77-89, March 2020.

26.         Z. Li, J. Wang, L. Deng, Z. He, X. Yang, B. Ji, Z. John Shen, "Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range," IEEE Transactions on Power Electronics, vol. 35, no. 5, pp. 5354-5365, May 2020.

27.         Jun Wang, Xi Jiang, “Review and analysis on SiC MOSFET’s ruggedness and reliability”, IET Power Electronics, vol. 13, no. 3, pp. 445-455, 2020.

28.         S. Liang, J. Wang, L. Deng, Y. Shi, X. Yin and Z. J. Shen, "An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1727-1735, Sept. 2019.

29.         S. Liang, J. Wang, F. Fang, L. Deng and Z. John Shen, "Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Anti-Parallel Diode for Improved Blocking Voltage," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1513-1518, Sept. 2019.

30.         S. Liang, J. Wang, F. Fang, H. Liu, W. Deng, "Investigation on 4H-SiC Gate Turn-off Thyristor with Direct Carrier Extraction Access to Drift Region for Power Conversion Applications, " Semiconductor Science and Technology, vol. 35, no. 4, 2020.

31.         J. Wang, Z. Li, X. Jiang, C. Zeng and J. Shen, "Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction", IEEE Transactions on Power Electronics, February 2019, vol 34, no. 2, pp. 1744-1754.

32.         Z. Peng, J. Wang, D. Bi, Y. Wen, Y. Dai, X. Yin, Z. Shen, “Droop Control Strategy Incorporating Coupling Compensation and Virtual Impedance for Microgrid Application”, IEEE Transactions on Energy Conversion, January 2019vol. 34, no. 1, pp. 277-291.

33.         J. Wang, X. Jiang, Z. Li and J. Shen, "Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch", IEEE Transactions on Power Electronics, 2018, vol 34, no. 3, pp. 2771-2780.

34.         J. Wang, S. Liang, L. Deng, X. Yin and Z. J. Shen, "An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect," IEEE Transactions on Power Electronics, vol. 34, no. 7, pp. 6794-6802, July 2019.

35.         S. Liang, J. Wang, F. Fang, and L. Deng, "Simulation study of a 4H-SiC lateral BJT for monolithic power integration," Journal of Semiconductors. Vol. 39, no. 12, 2018, 124004-1-4.

36.         S. Tang, X. Yin, D. Wang, C. Zhang, Z.Shuai, X. Yang, Z. John Shen, J. Wang, “Detection and Identification of Power Switch Failures for Fault Tolerant Operation of Flying Capacitor Buck-Boost Converters”, Microelectronics Reliability, vol. 88-90, September2018, pp.1236-1241.

37.         X. Jiang, J. Wang, J. Lu, J. Chen, X. Yang, Z. Li, C. Tu, J. Shen, “Failure Modes and Mechanism Analysis of SiC MOSFET under Short-Circuit Conditions”, Microelectronics Reliability, vol. 88-90, September 2018, pp.593-597.

38.         Y. Ning, Z. Peng, Y. Dai, D. Bi, J. Wang, “Enhanced Particle Swarm Optimization with Multi-swarm and Multi-Velocity for Optimizing High-dimensional Problems”, Applied Intelligence, August 29, 2018, pp.1-17.

39.         Z. Peng, J. Wang, D. Bi, Y. Dai, Y. Wen, "The Application of Microgrids Based on Droop Control with Coupling Compensation and Inertia", IEEE Transactions on Sustainable Energy, vol. 9, no. 3, July, 2018, pp. 1157-1168.

40.         L. LiaoJ. WangS. TangZ. ShuaiX. YinZ. J. Shen“A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor"IEEE Transactions on Power Electronicsvol. 32, no. 6, Jan. 2017pp. 4600-4606.

41.         王俊, 杨鑫, 高可靠性恒流源电路拓扑及其控制方法, 2020-12-11, 中国, CN201910382361.X.

42.          王俊, 彭志高, 梁世维, 一种用于斩波电路的单片集成半导体芯片及其制备方法, 2020-06-09, 中国, CN201710874285.5.

43.         王俊, 刘燕兰, 梁世维, 碳化硅MOS结构栅氧制备方法及碳化硅MOS结构制备方法, 2020-02-21, 中国, CN201710623958.X.

44.         王俊, 彭子舜, 戴瑜兴, 一种下垂控制方法和系统, 2020-06-23, 中国,  CN201711054153.4.

45.         王俊, 彭子舜, 戴瑜兴, 毕大强, 一种逆变系统多目标实时优化装置和方法, 2020-07-14, 中国, CN201810726865.4.

46.         彭子舜, 王俊, 一种下垂控制方法, 2019-12-06, 中国, CN201710147230.4.

47.         王俊, 邓建伟, 沈征, 一种具有三维半导体晶圆, 2019-6-7, 日本, 6535740.

48.         李宗鉴, 王俊, 张渊, 一种驱动电路及驱动电路板, 2019-02-19, 中国, CN201610699801.0.

49.         王俊, 李宗鉴, 江希, 一种半导体结构以其制作方法, 2019-04-30, 中国, CN201610696625.5.

50.         Jun Wang, S. Xu, J. Korec, “Power MOSFET with Integrated Gate Resistor and Diode-Connected MOSFET”, United States Patent 8614480, 2013.

51.         Jun Wang, Frank Baiocchi, Haian Lin, “Monolithically Integrated Transistors for a Buck Converter Using Source Down MOSFET”, US9646965 , 2017.

 

五、主要讲授课程

电力电子器件及应用技术(研究生), 现代电力电子技术基础(本科)

 

六、学生竞赛和就业简况

中国研究生电子设计竞赛和中国研究生创“芯”大赛国赛获奖6项;研究生就业单位包括:华为公司、比亚迪、三安光电、中国电子科技集团、国网、南网、上海大众、贵州大学、重庆大学等