邓林峰

 

一、基本情况

 

姓名:邓林峰;性别:男;民族:汉;出生年月:1980.8;职称职位:博士/副教授/硕士生导师

主要研究方向:半导体器件与集成电路,功率电子学,嵌入式系统及其应用。

现为湖南大学电气与信息工程学院副教授。近年来,主持参与国家级、省部级及其它科研项目14项,发表论文40余篇,被SCIEIISTP检索30余次。IEEE Transactions on Materials and Device Reliability, IEEE Transactions on Nanotechnology, Journal of Emerging and Selected Topics in Power Electronics, CPSS Transactions on Power Electronics and Applications等期刊杂志审稿人。

联系电话:13507485686 E-maillfdeng@hnu.edu.cn

 

二、教育背景

 

2008/01 – 2011/12,香港大学,工程学院电机电子工程系,博士;

2005/09 – 2007/06,华中科技大学,光学与电子信息学院微电子学系,硕士;

1999/09 – 2003/07,合肥工业大学,电子科学与应用物理学院物理系,学士。

 

三、培训和国内外进修

 

2013年12-20143月:香港理工大学Research Associate

2016年2-20172月:韩国延世大学访问学者

 

四、主讲课程

 

射频电子电路(本科)、ASIC设计初步(本科)、卫星通信(本科)、电路(本科)、电子技术(本科)、通信电路(留学生)、光纤通信(留学生)、研究生英语(硕士生)

 

五、近年来主持和参与的部分科研和教改项目

 

1)国家自然科学基金面上项目,51877073,碳化硅BJT功率集成基础技术研究,2019/01-2022/12,在研,主持

2)国家自然科学基金青年科学基金项目,61404048,基于低频噪声的有机场效应晶体管可靠性研究,2015/01-2017/12,已结题,主持

3)高等学校博士学科点专项基金项目,20120161120012,有机薄膜晶体管1/f噪声机理与特性研究,2013/01-2015/12,已结题,主持

4)湖南省自然科学基金项目,2015JJ3043,基于1/f噪声的有机场效应晶体管器件可靠性研究,2015/01-2017/12,已结题,主持

5)湖南大学青年教师成长计划项目,531107040551,有机薄膜晶体管1/f噪声的物理及电路模型研究,2012/05-2016/12,已结题,主持

6)面向非微电子专业《ASIC设计初步》的新教学方法探索,湖南大学教改项目,主持,20135-20145

7)国家自然科学基金面上项目,51577054,碳化硅双极结型晶体管的研究,2016/01-2019/12,在研,参加

8)国家自然科学基金面上项目,61671203,波束赋形和自适应波束调节的MIMO测试关键技术研究,2017/01-2020/12,在研,参加

9)国家自然科学基金面上项目,51977068,基于GaN晶体管的高性能多电平变换器,2020/01-2023/12,在研,参加

10) 湖南大学学科交叉项目,2016020,碳化硅BJT器件设计及在固态变压器中的应用研究,2016/01-2017/12,已结题,参加

11)湖南省自然科学基金项目,2013WK3033 ,便携式高精度电导测试仪的研究,2013/03-2014/03,已结题,参加

12)教育部科技项目, 教技司(2015354号,5G移动通信无线传输关键技术研究与评估,2016/01-2017/12,已结题,参加

13)湖南省科技计划重大专项计划,201733401294SiC关键装备和电力电子器件技术研发及产业化,2017/07-2020/06,在研,参加

14)湖南省科技计划项目,201433400223,微电流测量抗干扰理论及方法研究,2014/05-2015/12,已结题,参加

 

六、近年来部分科研论文、专利

 

科研论文

[1] L. F. Deng, C. M. Si, H. Q. Huang, J. Wang, H. Wen, and S. Im, "Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors," Microelectronics Journal, vol. 88, pp. 61-66, 2019.

[2] S. W. Liang, J. Wang, L. F. Deng(通讯作者), Y. Z. Shi, X. Yin, and Z. J. Shen, "An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, pp. 1727-1735, 2019.

[3] S. W. Liang, J. Wang, F. Fang, L. F. Deng(通讯作者), and Z. J. Shen, "Optimization Design of Isolation Rings in Monolithically Integrated 1200V SiC Transistor and Antiparallel Diode for Improved Blocking Voltage," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, pp. 1513-1518, 2019.

[4] J. Wang, S. W. Liang, L. F. Deng(通讯作者), X. Yin, and Z. J. Shen, "An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect," IEEE Transactions on Power Electronics, vol. 34, pp. 6794-6802, 2019.

[5] S. W. Liang, J. Wang, L. F. Deng, Fang F., and Z. J. Shen, "Monolithic Integration of SiC Power BJT and Small Signal BJTs for Power ICs," Ieee Journal of Emerging and Selected Topics in Power Electronics, Early Access.

[6]  L. F. Deng, P. T. Lai, W. B. Chen, J. P. Xu, Y. R. Liu, H. W. Choi, and C.M. Che, Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric, IEEE Electron Device Letters, 2011, 32, 93-95

[7] L. F. Deng, Y. R. Liu, H. W. Choi, J. P. Xu, C. M. Che, P. T. Lai, Effects of Annealing Temperature and Gas on Pentacene OTFTs with HfLaO as Gate Dielectric, IEEE Transactions on Device and Materials Reliability, 2012,12, 10-15.

[8] L. F. Deng, Y. R. Liu, H. W. Choi, C. M. Che, P. T. Lai, Improved Performance of Pentacene OTFTs with HfLaO Gate Dielectric by Using Fluorination and Nitridation, IEEE Transactions on Device and Materials Reliability, 2012,12, 520-525

[9] L. F. Deng, P. T. Lai, J. P. Xu, H. W. Choi, W. B. Chen, and C. M. Che, Improved Performance of Pentacene OTFT with HfLaO Gate Dielectric by Annealing in NH3, ECS Transactions, 2010, 33, 265-269

[10] 邓林峰, 余岳辉, 彭亚斌, 周郁明, 梁琳, 王璐,反向开关复合管的物理模型与数值方法实现, 半导体学报, 2007,28(6):931-938

[11] Liu Y. R., Deng, L. F., Yao, R. H., Lai, P. T. , Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric, IEEE Transactions on Device and Materials Reliability, 2010,10, 233-238

[12] Cheng K. H., Tang W. M., Deng L. F., Leung C. H., Lai P. T., Che C. M., Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric, Journal of Applied Physics, 2008,104, 116107-1--116107-4

[13] Y. R. Liu, P. T. Lai, R. H. Yao, L. F. Deng, Influence of octadecyltrichlorosilane surface modification on electrical properties of polymer thin-film transistors studied by capacitance-voltage analysis, IEEE Transactions on Device and Materials Reliability, 2011,11, 60-64

[14] L. F. Deng, P. T. Lai, Q. B. Tao, H. W. Choi, W. B. Chen, C. M. Che, J. P. Xu, Y. R. Liu, Improved Performance of Low-voltage Pentacene OTFTs by Incorporating La to Hafnium Oxide Gate Dielectric, 2010 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, P.R. China, 2010.11.11-11.12

[15]  Deng L. F., Choi H. W., Lai P. T. , Liu Y. R., Xu J. P., Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Xi’an, P.R.China, 2009.12.14-12.15.

[16]  Deng L. F., Tang W. M., Leung C. H., Lai P. T. , Xu J. P., Che C. M., Pentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, P.R. China,,2008.11.20-11-21

[17] 邓林峰, 余岳辉, 梁琳, 王璐, 重频RSD的关断模型研究, 中国电工技术学会电力电子学会第十届学术年会,西安,中国, 2006.9.23-9.25.

 

发明专利

[1] 一种加窗短时傅里叶变换三点插值动态频率测量方法;2015年;2686530号;已授权