一、 基本情况
陶明，女，汉族，中共党员，副教授，硕士生导师
主讲《数字电子技术基础》、《模拟电子技术基础》本科生专业核心课程；指导优秀本科生毕业设计，获湖南大学“本科毕业设计优秀指导老师”；指导本科生立项国家级，省部级大学生创新创业计划项目；关心学生成长与发展，获评“湖南大学优秀班主任”、“湖南大学优秀教师”、“电气83级奖教金”等荣誉称号或奖励。
目前主持在研经费充裕，与国防科技大学、工业和信息化部电子第五研究所、北京大学、清华大学、中科院纳米所、华为、国家电网等高校、研究所、企事业单位有着良好的合作研究关系。组内毕业研究生支持继续读博深造，或者推荐至企事业单位工作，欢迎具有电子、电气、物理、计算机、数学等学科背景的学生加入。
欢迎联系我！！！
E-mail：tming@hnu.edu.cn
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二、 教育背景与工作经历
2010.09~2014.06 华中科技大学 电子科学与技术 学士
2014.09~2020.06 北京大学 信息科学技术学院 博士
2020.09~2024.12 湖南大学 电气与信息工程学院 助理教授
2025.01~至今 湖南大学 电气与信息工程学院 副教授
三、 主要研究方向（不论是想从事前沿科学研究还是想从事实际工程任务，均能提供优异的平台并给予充分指导）
1、新一代功率器件、模块及系统应用研发
2、高性能数模混合集成电路设计（高速高精度ADC、DAC，低抖动锁相环等）
四、 课题组学生培养
1、鼓励学生参加国内外学术交流，向同行们介绍自己的工作，展示自己的风采！
2、入组培训，定期组会，定期组内团建活动，希望大家学得尽兴，玩得开心！
五、 代表性学术论文（陆续有论文待发表）
1、Xiaonan Wang, Ming Tao*, et al. “High-Frequency Three-Level Gate Driver for GaN HEMT Bridge Crosstalk Suppression” [J]. IEEE Transactions on Power Electronics, 2023. (功率应用领域国际顶级期刊)
2、Jiaofen Yang, Ming Tao, Jing Xiao*, et al. “Interface and Border Traps Study in Si3N4/AlN/GaN MIS-HEMTs with In-Situ N2 or H2/N2 Plasma Pretreatment” [J]. IEEE Electron Device Letters, 2025.(器件研发领域国际顶级期刊)
3、Yan Yu, Deng Luo*, Jianjun Chen, Yang Guo, Bin Liang, Yaqing Chi, Hanhan Sun, Jing Xiao, Hao Gao, Ming Tao**, Kai Tang, “A 0.024mm2 All-Digital Fractional Output Divider with 257fs Worst-Case Jitter Using Split-DTC-Based Background Calibration”. IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, 2025.(集成电路设计领域国际顶级会议，荣获2025丝绸之路奖)
4、Mingen Lv, Jing Xiao, Ming Tao, et al. “Analysis of Degradation Behavior and Mechanism of p-GaN Gate HEMT under High-Power Microwave Irradiation”[J]. IEEE Transactions on Electron Devices, 2025.(器件研发领域国际顶级期刊)
5、Jiaofen Yang, Ming Tao*, et al. “Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study” [J]. Elsevier Surfaces and Interfaces, 2024.
6、Jiashu Chen, Ming Tao*, et al. “Study on cubic boron nitride p-type element doping based on first-principles calculation” [J]. Elsevier Materials Science in Semiconductor Processing, 2023.
7、Jiashu Chen, Mingyuan Li, Yuanchao Peng, Junhua Li, Xinyu Xiao, Mengchao Shi, Jiaofen Yang, Ping Peng, Fei Liu, Jing Xiao, Ming Tao*, Jie Liu**, “Improving the accuracy of ion implantation simulations through the use of DFT-MD methodology” [J]. Physica B: Condensed Matter, 2024.
8、Zhuoying Zhao, Ziling Tan, Pinghui Mo, Xiaonan Wang, Dan Zhao, Xin Zhang***, Ming Tao**, Jie Liu*, “A Heterogeneous Parallel Non-von Neumann Architecture System for Accurate and Efficient Machine Learning Molecular Dynamics”[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2023.
9、Pu Tang, Ming Tao*, Jing Xiao, “Programming and read performances optimization of phase-change memory via multi-objective genetic algorithm and improved finite element analysis” [J]. Elsevier Materials Science in Semiconductor Processing, 2024.
10、Xi Ding, Ming Tao*, Junhua Li, Mingyuan Li, Mengchao Shi, Jiashu Chen, Zhen Tang, Francis Benistant, Jie Liu**, “Efficient and accurate atomistic modeling of dopant migration using deep neural network” [J]. Materials Science in Semiconductor Processing, 2022.
11、Jiaofen Yang, Ming Tao*, et al. “Investigation of the Trap States in Fully-Recessed Normally off LPCVD-Si3N4/PEALD-AlN/GaN MIS-HEMT with in-Situ N2 or H2/N2 Plasma Pretreatment”, 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2023.
12、Sizhe Xiao, Ming Tao*, Deng Luo, et al. “Single Event Effect Test System for Analog-to-Digital Converter Based on Calibration Technique”, 6th International Conference on Radiation Effects of Electron Devices (ICREED), 2025.
13、陶明*, 肖靖, 王茂俊, “面向MHz应用的GaN HEMT三电平串扰抑制驱动电路”, 第五届全国宽禁带半导体学术会议, 苏州, 2023.
14、王潇男, 陶明*, 肖靖, “用于GaN HEMT桥臂串扰抑制的负压自衰减驱动电路”, 第十六届中国半导体行业协会半导体分立器件年会暨苏州第三代半导体产业融合创新发展高峰论坛, 苏州, 2022.
15、岳俊, 陶明*, 吕明恩, 肖靖, “一种用于 GaN HEMT 的高频串扰抑制驱动电路”, 2023 中国电力电子与能量转换大会（CPEEC 2023）暨中国电源学会第二十六届学术年会, 广州, 2023.
16、Ming Tao, Shaofei Liu, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kai Cheng, Bo Shen, and Maojun Wang, “Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma Free, Self-Terminated Gate Recess Process,” IEEE Transactions on Electron Devices, 2018.(器件研发领域国际顶级期刊)
17、Ming Tao, Maojun Wang, Shaofei Liu, Bing Xie, Min Yu, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, and Bo Shen, “Buffer Induced Time Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon,” IEEE Transactions on Electron Devices, 2016.(器件研发领域国际顶级期刊)
18、Ming Tao, Maojun Wang, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kai Cheng, and Bo Shen, “Kilovolt GaN MOSHEMT on Silicon Substrate with Breakdown Electric Field Close to the Theroretical Limit,” IEEE 29th International Symposium on Power Semiconductors Devices & ICs (ISPSD), 2017.(功率器件领域国际顶级会议)
19、Ming Tao, Maojun Wang, Shaofei Liu, Cheng P. Wen, Jinyan Wang, Yilong Hao, and Wengang Wu, “The Role of Buffer Traps on the Time Dependent Off-State Leakage in AlGaN/GaN MIS-HEMT on Silicon,”12th International Conference on Nitride Semiconductors (ICNS), 2017.
20、Shaofei Liu, Maojun Wang, Ming Tao, Ruiyuan Yin, Jingnan Gao, Haozhe Sun, Wei Lin, Cheng P. Wen, Jinyan Wang, Wengang Wu, Yilong Hao, Zhaofu Zhang, Kevin J. Chen, and Bo Shen, “Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers,” IEEE Electron Device Letters, 2017.(器件研发领域国际顶级期刊)
21、Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong, Hao, Wengang Wu, Jun Xu, Kai Cheng, and Bo Shen, “A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices,” IEEE Electron Device Letters, 2016.(器件研发领域国际顶级期刊)
22、Fei Sang, Maojun Wang, Ming Tao, Shao Fei, Min Yu, Bing Xie, Cheng P. Wen, Jingyan Wang, Wengang Wu, Yilong Hao, and Bo Shen, “Time Dependent Threshold Voltage Drift Induced by Interface Traps in Normally-off GaN MOSFET with Different Gate Recess Technique,”Applied Physics Express, 2016.
23、Fei Sang, Maojun Wang, Ming Tao, “Investigation of the Threshold Voltage Drift in Enhancement Mode GaN MOSFET under Negative Gate Bias Stress,” Japanese Journal of Applied Physics, 2015.
六、 申请专利（陆续有专利在申请）
1、陶明，杜来，肖靖，唐凯。一种基于电流过零点的GaN功率器件动态导通电阻在线测量方法，中国发明专利，专利号：202510707976.0，申请日期：2025年7月8日，实质审查阶段。
2、陶明，岳俊，肖靖。一种用于抑制高频正负串扰并降低死区损耗的GaN功率器件驱动电路，中国发明专利，专利号：202410736512.8，申请日期：2024年6月7日，实质审查阶段。
3、陶明，王潇男，周骞。一种抑制高频GaN功率器件dv/dt串扰的多电平驱动电路，中国发明专利，专利号：202210419111.0，申请日期：2022年4月21日，实质审查阶段。
4、王茂俊，沈波，陶明，刘少飞，郝一龙，一种利用新型势垒层提高GaN增强型沟道迁移率的器件结构及实现方法，已申请（专利号：201710196720.3，申请日期：2017年3月29日）
5、王茂俊，陶明，张川，郝一龙，双脉冲软开关测试法区分GaN HEMT表面及缓冲层电流坍塌，已授权（专利号：201610117520X，授权日期：2019年11月1日）
6、王茂俊，陶明，一种提高GaN增强型MOSFET阈值电压的新型外延层结构，已申请（专利号：201811422595.4，申请日期：2018年11月27日）
